Módulo IGBT FP50R06W2E3 600V 50A

Manufacturer: Infineon
Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: 3-Phase Inverter
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.45 V
Continuous Collector Current at 25 C: 65 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 175 W
Package / Case: Module
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: 20 V
Mounting Style: SMD/SMT
Product Type: IGBT Modules
Series: Trench/Fieldstop IGBT3 - E3
Subcategory: IGBTs
Technology: Si
Tradename: EasyPIM
Part # Aliases: SP000375909 FP50R06W2E3BOMA1
Unit Weight: 39 g